数据表 |
图片 |
型号 |
品牌 |
库存 |
价格/元 |
数量 |
描述 |
|
|
AS4PMHM3_A/H |
Vishay General Semiconductor - Diodes Division |
5000 |
4.352000 |
|
DIODE AVALANCH 1KV 2.4A TO277A |
|
|
AS4PMHM3_A/I |
Vishay General Semiconductor - Diodes Division |
5000 |
4.352000 |
|
DIODE AVALANCH 1KV 2.4A TO277A |
|
|
NSB8BT-E3/81 |
Vishay General Semiconductor - Diodes Division |
5000 |
4.352000 |
|
DIODE GEN PURP 100V 8A TO263AB |
|
|
NSB8DT-E3/81 |
Vishay General Semiconductor - Diodes Division |
5000 |
4.352000 |
|
DIODE GEN PURP 200V 8A TO263AB |
|
|
NSB8GT-E3/81 |
Vishay General Semiconductor - Diodes Division |
5000 |
4.352000 |
|
DIODE GEN PURP 400V 8A TO263AB |
|
|
NSB8KT-E3/81 |
Vishay General Semiconductor - Diodes Division |
5000 |
4.352000 |
|
DIODE GEN PURP 800V 8A TO263AB |
|
|
FESB8GT-E3/45 |
Vishay General Semiconductor - Diodes Division |
5000 |
4.352000 |
|
DIODE GEN PURP 400V 8A TO263AB |
|
|
FESB8JT-E3/45 |
Vishay General Semiconductor - Diodes Division |
5000 |
4.352000 |
|
DIODE GEN PURP 600V 8A TO263AB |
|
|
VB20120S-E3/4W |
Vishay General Semiconductor - Diodes Division |
5000 |
4.352000 |
|
DIODE SCHOTTKY 120V 20A TO263AB |
|
|
VS-8ETH06STRL-M3 |
Vishay General Semiconductor - Diodes Division |
5000 |
4.352000 |
|
DIODE GEN PURP 600V 8A TO263AB |
|
|
VS-8ETH06STRR-M3 |
Vishay General Semiconductor - Diodes Division |
5000 |
4.352000 |
|
DIODE GEN PURP 600V 8A TO263AB |
|
|
VS-16EDH02-M3/I |
Vishay General Semiconductor - Diodes Division |
5000 |
8.704000 |
|
DIODE GEN PURP 200V 16A TO263AC |
|
|
VS-8ETX06STRL-M3 |
Vishay General Semiconductor - Diodes Division |
5000 |
4.352000 |
|
DIODE GEN PURP 600V 8A TO263AB |
|
|
VS-8ETX06STRR-M3 |
Vishay General Semiconductor - Diodes Division |
5000 |
4.352000 |
|
DIODE GEN PURP 600V 8A TO263AB |
|
|
VS-182NQ030PBF |
Vishay General Semiconductor - Diodes Division |
5000 |
152.252000 |
|
DIODE SCHOTTKY 30V 180A D-67 |