Datasheet | Image | Part Number | Manufacturers | Stock | Pricing(USD) | Quantity | Description |
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ES2AA | Taiwan Semiconductor Corporation | 5000 | 0.18 |
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DIODE GEN PURP 50V 2A DO214AC |
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FESB8DTHE3_A/P | Vishay General Semiconductor - Diodes Division | 5000 | 0.81 |
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DIODE GEN PURP 200V 8A TO263AB |
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ES2BA | Taiwan Semiconductor Corporation | 5000 | 0.18 |
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DIODE GEN PURP 100V 2A DO214AC |
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UGB8FTHE3_A/P | Vishay General Semiconductor - Diodes Division | 5000 | 0.81 |
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DIODE GEN PURP 300V 8A TO263AB |
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AS3BJHM3_A/H | Vishay General Semiconductor - Diodes Division | 5000 | 0.18 |
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DIODE AVALANCHE 600V 2A DO214AA |
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UGB8GTHE3_A/P | Vishay General Semiconductor - Diodes Division | 5000 | 0.81 |
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DIODE GEN PURP 400V 8A TO263AB |
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AS3BJHM3_A/I | Vishay General Semiconductor - Diodes Division | 5000 | 0.18 |
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DIODE AVALANCHE 600V 2A DO214AA |
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VB20120S-E3/8W | Vishay General Semiconductor - Diodes Division | 5000 | 0.81 |
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DIODE SCHOTTKY 120V 20A TO263AB |
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AS3BDHM3_A/H | Vishay General Semiconductor - Diodes Division | 5000 | 0.18 |
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DIODE AVALANCHE 200V 3A DO214AA |
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VS-18TQ035S-M3 | Vishay General Semiconductor - Diodes Division | 5000 | 0.81 |
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DIODE SCHOTTKY 35V 18A D2PAK |
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AS3BDHM3_A/I | Vishay General Semiconductor - Diodes Division | 5000 | 0.18 |
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DIODE AVALANCHE 200V 3A DO214AA |
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SFAF806G C0G | Taiwan Semiconductor Corporation | 5000 | 0.81 |
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DIODE GEN PURP 400V 8A ITO220AC |
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AS3BGHM3_A/H | Vishay General Semiconductor - Diodes Division | 5000 | 0.18 |
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DIODE AVALANCHE 400V 3A DO214AA |
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VS-MBRB1645-M3 | Vishay General Semiconductor - Diodes Division | 5000 | 0.81 |
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DIODE SCHOTTKY 45V 16A TO263AB |
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AS3BGHM3_A/I | Vishay General Semiconductor - Diodes Division | 5000 | 0.18 |
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DIODE AVALANCHE 400V 3A DO214AA |
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